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MTY100N10E
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0, I D = 250 μ A)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 100 Vdc, V GS = 0 Vdc)
(V DS = 100 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
100
?
?
?
?
?
115
?
?
?
?
?
10
200
100
Vdc
mV/ ° C
μ Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 μ Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance (V GS = 10 Vdc, I D = 50 Adc)
Drain ? Source On ? Voltage (V GS = 10 Vdc)
(I D = 100 Adc)
(I D = 50 Adc, T J = 125 ° C)
Forward Transconductance (V DS = 6 Vdc, I D = 50 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
30
?
7
?
1.0
?
49
4
?
0.011
1.2
1.0
?
Vdc
mV/ ° C
Ohm
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1 MHz)
C iss
C oss
C rss
?
?
?
7600
3300
1200
10640
4620
2400
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
48
96
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 50 Vdc, I D = 100 Adc,
V GS = 10 Vdc,
R G = 9.1 Ω )
t r
t d(off)
t f
?
?
?
490
186
384
980
372
768
Gate Charge
(See Figure 8)
(V DS = 80 Vdc, I D = 100 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
?
?
?
270
50
150
378
?
?
nC
Q 3
?
118
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(I S = 100 Adc, V GS = 0 Vdc)
(I S = 100 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 100 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ μ s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1
0.9
145
90
55
2.34
1.2
?
?
?
?
?
Vdc
ns
μ C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
4.5
13
?
?
nH
nH
1. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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